X-RAY LITHOGRAPHIC SYSTEM

An X-ray lithographic system has a convex mirror (51) onto which flux (54 min ) of synchrotron radiation (54) is incident. The flux (54 min ) is reflected by the mirror (51) onto a radiation sensitive film on a wafer (56). The mirror (51) is rotatively oscillated about an axis (52) to vary the angle...

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Bibliographische Detailangaben
Hauptverfasser:	KIMURA, TAKASHI, MOCHIJI, KOZO, OBAYASHI, HIDEHITO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES X-RAY TECHNIQUE
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Beschreibung
Zusammenfassung:	An X-ray lithographic system has a convex mirror (51) onto which flux (54 min ) of synchrotron radiation (54) is incident. The flux (54 min ) is reflected by the mirror (51) onto a radiation sensitive film on a wafer (56). The mirror (51) is rotatively oscillated about an axis (52) to vary the angles of incidence of the flux (54 min ) on the mirror (51) and hence vary the positions on the wafer (56) to which various components (54 min a, 54 min b) are reflected. In this way a more uniform distribution is achieved in the exposure of the film (56), making the system suitable for exposing relatively large semiconductor wafers.