NON-VOLATILE VARIABLE CAPACITY MEMORY DEVICE

NON-VOLATILE VARIABLE CAPACITY MEMORY DEVICE

The device comprises a single crystal floating electrode (32) of undoped silicon, two dual electron injector structures (33, 34), two injector electrodes (31), a control electrode (35) and a sense electrode (36). Each structure (33, 34) comprises two silicon-rich silicon dioxide layers sandwiching a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: WEINBERG, ZEEV AVRAHAM
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:The device comprises a single crystal floating electrode (32) of undoped silicon, two dual electron injector structures (33, 34), two injector electrodes (31), a control electrode (35) and a sense electrode (36). Each structure (33, 34) comprises two silicon-rich silicon dioxide layers sandwiching a layer of silicon dioxide. The outer electrodes can be for example doped polysilicon. The capacitance of the device is varied by changing the number of electrons present in the floating electrode using the electrodes (31) and the structures (33, 34). Readout uses electrodes (35, 36).