DEVICE MADE OF SILICON NITRIDE FOR PULLING SINGLE CRYSTAL OF SILICON AND METHOD OF MANUFACTURING THE SAME

A device made of silicon nitride for producing silicon single crystal from melted silicon by the pullup process using a seed crystal, wherein at least a portion of the device in contact with the melted silicon is constituted by a layer of silicon nitride precipitated from gasious phase and having a...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUO, SHUITSU, MURAOKA, HISASHI, USAMI, TOSHIRO, NAGASHIMA, HIDEO, WATANABE, MASAHARU, IMANISHI, YASUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH LIME, MAGNESIA METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A device made of silicon nitride for producing silicon single crystal from melted silicon by the pullup process using a seed crystal, wherein at least a portion of the device in contact with the melted silicon is constituted by a layer of silicon nitride precipitated from gasious phase and having a smooth surface of 400 mu m or below in Hmax. A method for producing the above device, wherein a crystalline silicon nitride layer is deposited on at least the inner or outer surface of a base member by the CVD process, and then the deposited surface of the silicon nitride layer is smoothed by a mechanical or a chemical process.