PROCESS FOR PRODUCING A POLYCRYSTALLINE SILICON CARBIDE BODY

PROCESS FOR PRODUCING A POLYCRYSTALLINE SILICON CARBIDE BODY

Method for the production of a polycrystalline shaped body of silicon carbide of a density of at least 98% of the theoretical density of silicon carbide, prepared through pressureless sintering at temperatures from 1,900 to 2,200 C. from at least 97 weight % of alpha -silicon carbide and/or beta -si...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEIMER, GERHARD, GUGEL, ERNST, DR
Format: Patent
Sprache:eng ; ger
Schlagworte:
ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SLAG
TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:Method for the production of a polycrystalline shaped body of silicon carbide of a density of at least 98% of the theoretical density of silicon carbide, prepared through pressureless sintering at temperatures from 1,900 to 2,200 C. from at least 97 weight % of alpha -silicon carbide and/or beta -silicon carbide under addition of up to 3 weight % of boron, characterized by the fact that the shaped body is prepared without any carbon additions to the batch and is pressureless sintered in a carbon containing protective gas atmosphere.