Negative-working resists for recording high-energy radiation

Novel resists for recording high-energy radiation exposure are described. The resists comprise acrylic copolymers having from 50 to 95 mole percent of recurring units of the structure: …… and from 5 to 50 mole percent of recurring units of the structure: …… wherein R and R are each hydrogen or methy...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	PETROPOULOS, CONSTANTINE CHRIS, TAN, ZOILO CHENG HO, RAUNER, FREDERICK JOSEPH
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Novel resists for recording high-energy radiation exposure are described. The resists comprise acrylic copolymers having from 50 to 95 mole percent of recurring units of the structure: …… and from 5 to 50 mole percent of recurring units of the structure: …… wherein R and R are each hydrogen or methyl; R is -R -CH=CH2 or 3-norbornenyl group; R and R are each independently alkylene having from 1 to 3 carbon atoms; T is an -O- or a -NH- group;. The resists have improved sensitivity to high-energy radiation exposure and improved resistance to plasma etching.