PROCESS FOR THE MANUFACTURE OF A GAAS SEMICONDUCTOR ARRANGEMENT
Fabricating a semiconductor arrangement with a semiconductor body of an AIII-BV compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metall...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Fabricating a semiconductor arrangement with a semiconductor body of an AIII-BV compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metallization is required. |
---|