PROCESS FOR THE MANUFACTURE OF A GAAS SEMICONDUCTOR ARRANGEMENT

Fabricating a semiconductor arrangement with a semiconductor body of an AIII-BV compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metall...

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Bibliographische Detailangaben
Hauptverfasser: PETTENPAUL, EWALD DR, WEIDLICH, HERBERT NAT, HUBER, JAKOB
Format: Patent
Sprache:eng ; ger
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Beschreibung
Zusammenfassung:Fabricating a semiconductor arrangement with a semiconductor body of an AIII-BV compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts on different zones doped with these doping substances only one metallization is required.