SELECTIVE METAL REMOVAL IN THE PRESENCE OF A METAL SILICIDE

In the process a metal (21) is removed by means of ion milling in an inert gas ambient. The process is optimized with regard to the removal rate and its selectivity in the presence of a metal silicide (19) by properly adjusting the acceleration voltage, the acceleration current, the pressure in the...

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Bibliographische Detailangaben
Hauptverfasser:	SARKARY, HOMI GUSTADJI, GARTNER, HELMUT MATTHEW, SCHNITZEL, RANDOLPH HUFF, PETVAI, STEVE ISTVAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In the process a metal (21) is removed by means of ion milling in an inert gas ambient. The process is optimized with regard to the removal rate and its selectivity in the presence of a metal silicide (19) by properly adjusting the acceleration voltage, the acceleration current, the pressure in the reaction chamber and the angle of incidence of the ion milling on the metal surface. The process can be used to remove excess metal (21), such as platinum, from the surface of insulating layers (13,15) on silicon substrate (11) following a blanket deposition of the metal on substrate (11) covered partly by insulating layers (13,15) and the formation of the metal silicide (19) in areas where the metal contacted the silicon substrate (11).