APPARATUS AND PROCESS FOR PLASMA-ETCHING

End point detection in the plasma development of photoresist is accomplished by monitoring the output of a photo- detector and sensing a plateau in the output. An evacuable chamber (11) contains a gas etchant and the material to be etched and a source of RF energy coupled to the interior of the cham...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KELLER, JED V
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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