APPARATUS AND PROCESS FOR PLASMA-ETCHING

End point detection in the plasma development of photoresist is accomplished by monitoring the output of a photo- detector and sensing a plateau in the output. An evacuable chamber (11) contains a gas etchant and the material to be etched and a source of RF energy coupled to the interior of the cham...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	KELLER, JED V
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	End point detection in the plasma development of photoresist is accomplished by monitoring the output of a photo- detector and sensing a plateau in the output. An evacuable chamber (11) contains a gas etchant and the material to be etched and a source of RF energy coupled to the interior of the chamber (11) for sustaining a plasma, photo-detector means '18,19) being optically coupled to the interior of the chamber (11) for producing a variable level output signal representative of the luminosity of the plasma and control means including a sensor (22) for detecting a temporary uniformity in the level of the output signal as an indication of the end of a first phase of the plasma etch.