SHALLOW-HOMOJUNCTION SOLAR CELLS

Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semi conductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n+/p/p+ structure (26, 24, 22) in which the n+ top layer (26) is limited to...

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Bibliographische Detailangaben
Hauptverfasser:	CHAPMAN, RALPH, L, MCCLELLAND, ROBERT, W, FAN, JOHN, C.C, BOZLER, CARL, O
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semi conductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n+/p/p+ structure (26, 24, 22) in which the n+ top layer (26) is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer (24). An antireflection coating (28) is applied over the n+ top layer (26), and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.