THREE-LAYER SEMICONDUCTOR DIODE AND ITS APPLICATION

A semiconductor diode comprises an NPN or a PNP-three-layer structure of alternate conductivity type formed of three bordering semiconductor layers and having ohmic contacts. The diode is characterized in that in order to reduce the energy barrier, the central layer in the three-layer structure is s...

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Bibliographische Detailangaben
1. Verfasser: MADER, HERMANN
Format: Patent
Sprache:eng ; ger
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