THREE-LAYER SEMICONDUCTOR DIODE AND ITS APPLICATION

A semiconductor diode comprises an NPN or a PNP-three-layer structure of alternate conductivity type formed of three bordering semiconductor layers and having ohmic contacts. The diode is characterized in that in order to reduce the energy barrier, the central layer in the three-layer structure is s...

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Bibliographische Detailangaben
1. Verfasser:	MADER, HERMANN
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TOANOTHER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION OF NOISE BY SUCH CIRCUITS GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor diode comprises an NPN or a PNP-three-layer structure of alternate conductivity type formed of three bordering semiconductor layers and having ohmic contacts. The diode is characterized in that in order to reduce the energy barrier, the central layer in the three-layer structure is selected in its thickness to be so thin that already without external electrode voltage applied to the ohmic contacts, with a given doping of the central layer, the entire central layer is depleted of free charge carriers.