METHOD OF A BIDOMAIN STRUCTURE FORMATION IN FERROELECTRIC SINGLE CRYSTAL WAFERS

The invention relates to the information of bidomain structure in ferroelectric single crystals and can be used in nanotech and micromechanics for fabrication and operation of precise positioning devices, such as probe microscopes, tunable laser resonators, optics adjustment etc. The technical resul...

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Bibliographische Detailangaben
Hauptverfasser:	PARKHOMENKO, Yuriy Nikolaevich, KUBASOV, Ilya Viktorovich, BYKOV, Alexander Sergeevich, ZHUKOV, Roman Nikolaevich, GRIGORYAN, Sedrak Gurgenovich, KISELEV, Dmitriy Aleksandrovich, MALINKOVICH, Mikhail Davydovich
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to the information of bidomain structure in ferroelectric single crystals and can be used in nanotech and micromechanics for fabrication and operation of precise positioning devices, such as probe microscopes, tunable laser resonators, optics adjustment etc. The technical result achieved is the formation of bidomain boundary, along with increased efficiency and stability of transforming electric signals to elastic deformations, raising sensitivity and precision due to the absence of mechanical hysteresis, creep and residual deformations in wide range of working temperatures with a high linearity of the voltage-to-mechanical deformation dependence. Изобретение относится к информации о монокристаллах сегнетоэлектриков с бидоменной структурой и может быть использовано в нанотехнологии и микромеханике при создании и работе приборов точного позиционирования, таких как зондовые микроскопы, лазерные резонаторы, при юстировке оптически и т.д. Достигаемый технический результат заключается в обеспечении формирования бидоменной структуры при обеспечении повышения эффективности и стабильности преобразования электрического сигнала в механические упругие деформации, чувствительности, точности за счет отсутствия механического гистерезиса, ползучести и остаточных деформаций в широком интервале рабочих температур при высокой линейности характеристики "электрическое напряжение - механическая деформация".