PROCESS FOR FORMING BULKS OF CARBON NANOTUBES
The invention relates to technology of carbon nanotubes production (CNT). A process for forming bulks of carbon nanotubes comprises providing a substrate into a reactor, feeding carrier gas, introducing a solution of a metalloorganic compound into the heated reactor by injection, spraying or atomiza...
Gespeichert in:
Hauptverfasser: | , , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; rus |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to technology of carbon nanotubes production (CNT). A process for forming bulks of carbon nanotubes comprises providing a substrate into a reactor, feeding carrier gas, introducing a solution of a metalloorganic compound into the heated reactor by injection, spraying or atomization, wherein a buffer layer is preformed on the substrate surface above which a layer is formed comprising at least one disintegration activator of the metalloorganic compound, then a topological image is formed by lithography and when introducing the solution of a metalloorganic compound in the heated volume control its rate providing flux density of metal atoms in the reactor working zone comprised in the metalloorganic compound not exceeding 3,1x10mol/(mc). The technical result is aimed at expanding functional abilities of a method for the synthesis of CNT providing carbon nanotube growth on CNT functional substrate of the given topology with the given characteristic CNT diameter with sufficient result repeatability. A chemical vapor deposition (CVD) method using a vapor phase catalyst of directly growing aligned carbon nanotubes on a metal surfaces. The method allows for fabrication of carbon nanotube containing structures that exhibit a robust carbon nanotube metal junction without a pre-growth application of solid catalytic materials to the metal surface or the use of solder or adhesives in a multi-step fabrication process. This invention provides an aligned single-layer carbon nanotube bulk structure, which comprises an assembly of a plurality of aligned single-layer carbon nanotube and has a height of not less than 10 mum, and an aligned single-layer carbon nanotube bulk structure which comprises an assembly of a plurality of aligned single-layer carbon nanotubes and has been patterned in a predetermined form. This structure is produced by chemical vapor deposition (CVD) of carbon nanotubes in the presence of a metal catalyst in a reaction atmosphere with an oxidizing agent, preferably water, added thereto. An aligned single-layer carbon nanotube bulk structure, which has realized high purify and significantly large scaled length or height, its production process and apparatus, and its applied products are provided. This invention relates to a process for preparing a patterned layer of aligned carbon nanotubes on a substrate including: applying a photoresist layer to at least a portion of a surface of a substrate capable of supporting nanotube growth, m |
---|