INFRAROER DETEKTOR

INFRAROER DETEKTOR

A cadmium mercury telluride (C.M.T.) layer (5) is epitaxially grown on a substrate (1, 2) of, for example, cadmium telluride. The substrate (3) is subsequently etched away with a mixture of nitric, hydrofluoric and lactic acids. A thin barrier layer (3) of mercury telluride is provided which is not...

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Bibliographische Detailangaben
Hauptverfasser: HYLIANDS MICHAEL JAMES, BEVAN MALCOLM JOHN, NICHOLSON LINDA KAY, GURNELL ANDREW WILLIAM, SINGH SURENDRA PRATAP
Format: Patent
Sprache:dan
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A cadmium mercury telluride (C.M.T.) layer (5) is epitaxially grown on a substrate (1, 2) of, for example, cadmium telluride. The substrate (3) is subsequently etched away with a mixture of nitric, hydrofluoric and lactic acids. A thin barrier layer (3) of mercury telluride is provided which is not attacked by the above etching solution. This barrier layer is removed by polishing to leave an optically flat C.M.T. layer which may incorporate a cadmium telluride passivating layer on its surface.