FOTO-ELEKTRISK CELLE

FOTO-ELEKTRISK CELLE

The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor mater...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ALESSANDRINI P, ANGELIS L D, SCAFE E, GALLUZZI F, LOSCIALE F
Format: Patent
Sprache:dan
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm2.