Fremgangsmåde til kommutering af en omformerfase med omvendt ledende IGBT'er

The invention relates to a method for commutating from a reverse-conducting IGBT (T1) operated in the diode mode to a reverse-conducting IGBT (T2) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T1) operated in the diode mode is turned off only at the instant a cur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: ECKEL, Hans-Günter
Format: Patent
Sprache:dan
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Beschreibung
Zusammenfassung:The invention relates to a method for commutating from a reverse-conducting IGBT (T1) operated in the diode mode to a reverse-conducting IGBT (T2) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T1) operated in the diode mode is turned off only at the instant a current starts to flow in the reverse-conducting IGBT (T2) operated in the IGBT mode. Accordingly said commutation method is event-driven, as a result of which it is less sensitive to poorly toleranced operating times.