SKAEREVAERKTOEJ, SAMT FREMGANGSMAADE TIL FREMSTILLING DERAF

A coating (3) is deposited on a substrate (1) of a cutting tool and contains a refractory metal compound of the group of C, N, O, B, Si elements with microcrystals incorporated therein, which compound is produced by heating by means of metal ion bombardment with the simultaneous inlet of a gas reage...

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Hauptverfasser:	GALITSKAYA GALINA KONSTANTINOVNA, STEPNOV EVGENY MIKHAILOVICH, SINELSCHIKOV ANDREI KARLOVICH, GAVRILOV ALEXEI GEORGIEVICH, ZHED VIKTOR PETROVICH, LEIN ANATOLY MIKHAILOVICH, BOYARUNAS ALBERT MIKHAILOVICH
Format:	Patent
Sprache:	dan
Schlagworte:	ARTIFICIAL STONE BORING CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMBINED OPERATIONS COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY OTHER WORKING OF METAL PERFORMING OPERATIONS REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF NATURAL STONE TURNING UNIVERSAL MACHINE TOOLS
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Beschreibung
Zusammenfassung:	A coating (3) is deposited on a substrate (1) of a cutting tool and contains a refractory metal compound of the group of C, N, O, B, Si elements with microcrystals incorporated therein, which compound is produced by heating by means of metal ion bombardment with the simultaneous inlet of a gas reagent containing the elements from the group of C, N, B, O, Si. The heating is effected up to a temperature, which is 100C less than the temperature at which the loss of strength of the substrate takes place, and which is maintained in the range from said temperature to +50C. A pressure of the gas reagent is adjusted simultaneously in the range of 13.33 to 13.33 x 10Pa. A maximum number of the microcrystals have such an orientation that the same crystallographic plane (4) thereof is parallel to the substrate (1).