FREMGANGSMAADE TIL FREMSTILLING AF SKIVEFORMEDE SILICIUMKRYSTALLER MED KOLUMNASTRUKTUR

A plate-like silicon crystal having a columnar structure formed along the direction of the shortest axis, produced by cooling molten silicon, which may contain a doping agent, in a temperature gradient between the two largest boundary surfaces of the melt, one of which has a maximum temperature of 1...

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Bibliographische Detailangaben
1. Verfasser:	AUTHIER BERNHARD
Format:	Patent
Sprache:	dan
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PERFORMING OPERATIONS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A plate-like silicon crystal having a columnar structure formed along the direction of the shortest axis, produced by cooling molten silicon, which may contain a doping agent, in a temperature gradient between the two largest boundary surfaces of the melt, one of which has a maximum temperature of 1200 DEG C., and the opposite surface being at least 200 DEG to 1000 DEG C. higher, but below the melting point of silicon.