Burstmodus-Halbleiterspeicheranordnung
In a semiconductor memory device having a burst function, a memory circuit (2) inputs and outputs information corresponding to an external input signal (A1-A10) in synchronization with an internal clock signal (S4). A burst operation control circuit receives an external reference clock signal (CX) a...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In a semiconductor memory device having a burst function, a memory circuit (2) inputs and outputs information corresponding to an external input signal (A1-A10) in synchronization with an internal clock signal (S4). A burst operation control circuit receives an external reference clock signal (CX) and an enable signal (E1) for switching a burst operation mode and a stand-by mode, so as to suspend supplying of the external input signal in the burst operation mode and suspend generation of the first internal clock signal in the stand-by mode. |
---|