Hochtemperatur-Supraleitfähigkeit in einem gespannten Si/SiGe-Übergang

A structure based on strained Si/SiGe that has high temperature superconductivity is disclosed. The structure for carrying superconducting current includes a substrate (12); a first epitaxial P type semiconductor layer (14), which is under compressive strain, for transporting holes; a second epitaxi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ISMAIL, KHALID EZZELDIN, LEE, KIM YANG, CHU, JACK OON
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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