Faradayrotator mit rechteckiger Hysterese

A Faraday rotator is formed of a bismuth-substituted iron garnet single crystal film grown by a liquid phase epitaxial method. The single crystal film is represented by a formula: Tb3-xBixFe5-y-zGayAlzO12 wherein x has the range 1.1

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Bibliographische Detailangaben
Hauptverfasser:	TAKEDA, NORIO, SHIRAI, KAZUSHI, HIRAMATSU, KIYONARI
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A Faraday rotator is formed of a bismuth-substituted iron garnet single crystal film grown by a liquid phase epitaxial method. The single crystal film is represented by a formula: Tb3-xBixFe5-y-zGayAlzO12 wherein x has the range 1.1