Halbleiterbauelemente mit Beschichtung aus Tantalum-Aluminiumoxid

An active semiconductor device (10) includes a coating (14) comprising an oxide of tantalum and aluminum. The coating may function as an AR coating or as a passivation coating for a semiconductor laser device. Applications to ICs and optical devices are described.

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Bibliographische Detailangaben
Hauptverfasser:	GRODKIEWICZ, WILLIAM HENRY, CHAKRABARTI, UTPAL KUMAR, WU, PING
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An active semiconductor device (10) includes a coating (14) comprising an oxide of tantalum and aluminum. The coating may function as an AR coating or as a passivation coating for a semiconductor laser device. Applications to ICs and optical devices are described.