Verfahren zur Herstellung polykristalliner Halbleiter

A process and an apparatus for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible (9), heating to melt the raw semiconductor material in the crucible (9) by heating means (5), solidifying the melted material while depriving the bottom of the cru...

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Bibliographische Detailangaben
1. Verfasser:	OKUNO, TETSUHIRO
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A process and an apparatus for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible (9), heating to melt the raw semiconductor material in the crucible (9) by heating means (5), solidifying the melted material while depriving the bottom of the crucible (9) of heat, and then cooling the crucible (9) to cool the solidified semiconductor, in an atmosphere inert to the semiconductor throughout, characterized by alternately subjecting the semiconductor crystal to growth and annealing in the solidification step while periodically varying the amount of heat liberated from the raw semiconductor material.