Laservorrichtung mit vergrabener Struktur für integrierte photonische Schaltung und Herstellungsverfahren

The apparatus includes a buffer layer (11) and a substrate (10) which are doped with carriers of a first type. A first layer (12) comprising an undoped quaternary compound, notably GaInAsP, forms a waveguide covering the whole of the buffer layer and supports an extremely fine intermediate layer (13), highly doped by first type carriers. The stripes (14) are an undoped quaternary compound and they are enclosed by a sheathing layer (16) doped by carriers of the second type. The waveguide thickness lies between 0.3 and 1 mu m. A second extremely fine intermediate layer and associated waveguide layer may be interposed between the first intermediate and waveguide layers to ensure the charge on the first layer.