EEPROM-Speicher, der mit Fowler-Nordheim Effekt programmiert und gelöscht wird

EEPROM-Speicher, der mit Fowler-Nordheim Effekt programmiert und gelöscht wird

The EEPROM includes N word lines (WL) and M bit lines (BL) in a matrix. Cells of the same group are connected to the same word line and to K distinct bit lines. First selection lines (SL1) and command lines (CL) associated with the cell groups carry selection potentials (VPP, VCC, HVH, GND) and prog...

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Bibliographische Detailangaben
Hauptverfasser: GUEDJ, MARC, CABINET BALLOT SCHMIT, 57000 METZ, FR, DEMANGE, NICOLE, CABINET BALLOT SCHMIT, 57000 METZ, FR, AULAS, MAXENCE, CABINET BALLOT SCHMIT, 57000 METZ, FR, BRIGATI, ALLESSANDRO, CABINET BALLOT SCHMIT, 57000 METZ, FR
Format: Patent
Sprache:ger
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:The EEPROM includes N word lines (WL) and M bit lines (BL) in a matrix. Cells of the same group are connected to the same word line and to K distinct bit lines. First selection lines (SL1) and command lines (CL) associated with the cell groups carry selection potentials (VPP, VCC, HVH, GND) and programming and erasing or reading controls (VPP, HVN, VREAD). A p-type group selection transistor (TSG1) connects on its channel the gates of the floating gate transistors (TGF1-TGFK) of one cell group to one of the control lines. The control gate of the selection transistor is connected to one of the selection lines when the programmer wishes to program, erase or read the contents of the first group.