Methode zur Lagebestimmung und Analyse von feinem Fremdmaterial

Methods wherein a partial region of a fine foreign matter which is detected first in a particle counter is detected again, observed, analyzed and evaluated by irradiating a spot of beam light to the region, observing a scattered light from a dark field or a dark part in the spot from a bright field,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	FUJINO, NAOHIKO, KARINO, ISAMU
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF TESTING
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Beschreibung
Zusammenfassung:	Methods wherein a partial region of a fine foreign matter which is detected first in a particle counter is detected again, observed, analyzed and evaluated by irradiating a spot of beam light to the region, observing a scattered light from a dark field or a dark part in the spot from a bright field, a coordinate of the analyzer being linked with a coordinate of the partial counter and registered in the analyzer. Thereby semiconductor devices or liquid crystal display devices are inspected accurately and immediately.