TRANSPARENTER GEGENSTAND MIT SILICIUMNITRID-SCHUTZSCHICHT

Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride fil...

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Hauptverfasser: BOND, ROBERT, SPRING GREEN, WI 53588, US, HOFFMAN, WAYNE, SPRING GREEN, WI 53588, US, STANEK, ROGER, P., SPRING GREEN, WI 53588, US
Format: Patent
Sprache:ger
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Zusammenfassung:Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 ANGSTROM to 150 ANGSTROM in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.