Verfahren zur Herstellung von Flash EPROM Anordungen

Verfahren zur Herstellung von Flash EPROM Anordungen

Method comprises: growing field oxide (32) to form an opening (30) in the redundancy select area (I) and two parallel field oxide strips (42) in the core area (II); patterning a polySi control strip (28) in (I) and a pair of word strips (22) in (II), the word strips being perpendicular to the field...

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Hauptverfasser: RICHART, ROBERT B, WANG, FEI, GARG, SHYAM G
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator RICHART, ROBERT B
WANG, FEI
GARG, SHYAM G
description Method comprises: growing field oxide (32) to form an opening (30) in the redundancy select area (I) and two parallel field oxide strips (42) in the core area (II); patterning a polySi control strip (28) in (I) and a pair of word strips (22) in (II), the word strips being perpendicular to the field oxide strips; forming photoresist windows on one side of the control strip and between the word strips; plasma etching the field oxide strips exposed by the window within (II) and native oxide formed within the window in (I); and implanting source regions in (I) and (II) through the windows.
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patterning a polySi control strip (28) in (I) and a pair of word strips (22) in (II), the word strips being perpendicular to the field oxide strips; forming photoresist windows on one side of the control strip and between the word strips; plasma etching the field oxide strips exposed by the window within (II) and native oxide formed within the window in (I); and implanting source regions in (I) and (II) through the windows.</description><edition>7</edition><language>ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20021128&amp;DB=EPODOC&amp;CC=DE&amp;NR=69429973T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20021128&amp;DB=EPODOC&amp;CC=DE&amp;NR=69429973T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RICHART, ROBERT B</creatorcontrib><creatorcontrib>WANG, FEI</creatorcontrib><creatorcontrib>GARG, SHYAM G</creatorcontrib><title>Verfahren zur Herstellung von Flash EPROM Anordungen</title><description>Method comprises: growing field oxide (32) to form an opening (30) in the redundancy select area (I) and two parallel field oxide strips (42) in the core area (II); 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Verfahren zur Herstellung von Flash EPROM Anordungen
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