Verfahren zur Herstellung von Flash EPROM Anordungen

Verfahren zur Herstellung von Flash EPROM Anordungen

Method comprises: growing field oxide (32) to form an opening (30) in the redundancy select area (I) and two parallel field oxide strips (42) in the core area (II); patterning a polySi control strip (28) in (I) and a pair of word strips (22) in (II), the word strips being perpendicular to the field...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: RICHART, ROBERT B, WANG, FEI, GARG, SHYAM G
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Method comprises: growing field oxide (32) to form an opening (30) in the redundancy select area (I) and two parallel field oxide strips (42) in the core area (II); patterning a polySi control strip (28) in (I) and a pair of word strips (22) in (II), the word strips being perpendicular to the field oxide strips; forming photoresist windows on one side of the control strip and between the word strips; plasma etching the field oxide strips exposed by the window within (II) and native oxide formed within the window in (I); and implanting source regions in (I) and (II) through the windows.