Integrierte EEPROM-Schaltung mit reduziertem Substrat-Effekt und Zwei-Wannen-Herstellungsverfahren hiervon

Integrierte EEPROM-Schaltung mit reduziertem Substrat-Effekt und Zwei-Wannen-Herstellungsverfahren hiervon

A twin-well process for the manufacturing of an EEPROM integrated device comprises the steps of: selectively forming at least one first-conductivity-type well (7) in a first substrate portion (6) of a semiconductor substrate (1); forming in said first substrate portion (6) second-conductivity-type w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: VAJANA, BRUNO, BALDI, LIVIO
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A twin-well process for the manufacturing of an EEPROM integrated device comprises the steps of: selectively forming at least one first-conductivity-type well (7) in a first substrate portion (6) of a semiconductor substrate (1); forming in said first substrate portion (6) second-conductivity-type wells (10), outside said first-conductivity-type well (7); forming in said at least one first-conductivity-type well (7) and in said second-conductivity-type-wells (10) second-conductivity-type-channel MOSFETs and first-conductivity-type-channel MOSFETs, respectively, and simultaneously forming a plurality of EEPROM memory cells in a second substrate portion (5) in which no wells have been formed.