REFLEXIONSVERMINDERNDE OBERFLÄCHENBESCHICHTUNGEN

An anti-reflective coating composition for a photoresist and process for producing such a coating having a refractive index of from greater than about 1.20 to about 1.40, which is capable of being applied in a single quarter wavelength thickness and is removable with a developer for the underlying p...

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Bibliographische Detailangaben
Hauptverfasser:	JAIN, SANGYA, FUNK, RUDIGER
Format:	Patent
Sprache:	ger
Schlagworte:	ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY CINEMATOGRAPHY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FILLING PASTES HOLOGRAPHY INKS MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES SEMICONDUCTOR DEVICES USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	An anti-reflective coating composition for a photoresist and process for producing such a coating having a refractive index of from greater than about 1.20 to about 1.40, which is capable of being applied in a single quarter wavelength thickness and is removable with a developer for the underlying photoresist; the coating composition comprising a copolymer containing the following units: a) where X is CO2L, SO3L, OH, CO(OC2H4)xOH, CONHC(CH3)2CH2SO3L, PO3L2 or CONH2 where L=H, a Group I or Group II cation or NH4 and x=0-10; b) where Y is Fluorine or a Fluorine containing aliphatic organic substituent, preferably selected from COO(CH2)x(CF2)nCF3, SO2O(CH2)x(CF2)nCF3, SO2(OC2H4)xO(CH2)x(CF2)nCF3, CO(OC2H4)xO(CH2)x(CF2)nCF3 or c) wherein the aliphatic chain can be branched or unbranched; where R=H, halogen, CF3, C1-C8 alkyl or CN; n=0-14; and x=0-10.