Verfahren zur Herstellung begrabener Oxidschichten in einem Silizium-Wafer

A method for forming buried oxide layers within silicon wafers, the particularity whereof resides in the fact that it comprises the following steps: the formation of recesses in a silicon wafer; the implanting of light ions in the silicon wafer at a depth that is smaller than the depth of the recess...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CAMPISANO, SALVATORE UGO, I-95100 CATANIA, IT, RAINERI, VITO, I-95030 MASCALUCIA (PROV. OF CATANIA), IT
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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