Verfahren zur Herstellung begrabener Oxidschichten in einem Silizium-Wafer

A method for forming buried oxide layers within silicon wafers, the particularity whereof resides in the fact that it comprises the following steps: the formation of recesses in a silicon wafer; the implanting of light ions in the silicon wafer at a depth that is smaller than the depth of the recesses, so as to form bubbles of the light ions in the silicon wafer; the evaporation of the light ions through the silicon wafer so as to leave cavities in the place of the bubbles; the oxidation of the cavities through the recesses so as to form a buried layer of silicon oxide. An important aspect of the present invention is that the above mentioned steps can also be performed in a different order.