Diamantähnliche Kohlenstoffilme hergestellt aus einem Kohlenwasserstoff-Helium-Plasma

The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited...

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Bibliographische Detailangaben
Hauptverfasser:	DOANY, FUAD ELIAS, KATONAH, NEW YORK 10536, US, HOVEL, HAROLD JOHN, KATONAH, NEW YORK 10536, US, SCHERPEREEL, CHRISTOPHER MICHAEL, POUGHQUAG, NEW YORK 12570, US, SHAW, JANE MARGARET, RIDGEFIELD, CONNECTICUT 06877, US, BAILEY, FREDERIC DENIS, LAKEWOOD, COLORADO 80228, US, LUSTIG, NAFTALI ELIAHU, CROTON-ON-HUDSON, NEW YORK 10520, US, CLEARFIELD, HOWARD MARC, YORKTOWN HEIGHTS, NEW YORK 10598, US, LATULIPE, DOUGLAS CHARLES, JR., DANBURY, CONNECTICUT 06811, US, CALLEGARI, ALESSANDRO CESARE, YORKTOWN HEIGHTS, NEW YORK 10598, US, POMERENE, ANDREW THOMAS STEWART, NEW FAIRFIELD, CONNECTICUT 06812, US, BUCHANAN, DOUGLAS ANDREW, CORDTLAND MANOR, NEW YORK 1056, US, SEEGER, DAVID EARLE, CONGERS, NEW YORK 10920, US, FLAGELLO, DONIS GEORGE, RIDGEFIELD, CONNECTICUT 06877, US, PURUSHOTHAMAN, SAMPATH, YORKTOWN HEIGHTS, NEW YORK 10598, US
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS SPECIALLY ADAPTED THEREFOR APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GENERAL PROCESSES OF COMPOUNDING HOLOGRAPHY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY MATERIALS THEREFOR METALLURGY NON-METALLIC ELEMENTS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.