BETATIGUNGSEINHEITEN UND MIKROSENSOREN IN SOI-TECHNIK

BETATIGUNGSEINHEITEN UND MIKROSENSOREN IN SOI-TECHNIK

The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride hav...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US, MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US
Format: Patent
Sprache:ger
Schlagworte:
INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK
PHYSICS
TESTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US
MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US
description The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE69303893TT2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE69303893TT2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE69303893TT23</originalsourceid><addsrcrecordid>eNrjZDB1cg1xDPF0D_VzD3b19PNw9Qxx9VMI9XNR8PX0DvIPdvUL9g8Cinj6KQT7e-qGuDp7-Hl68zCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeBdXM0tjA2MLS-OQECNjohQBAHE7KNM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BETATIGUNGSEINHEITEN UND MIKROSENSOREN IN SOI-TECHNIK</title><source>esp@cenet</source><creator>ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US ; MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US</creator><creatorcontrib>ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US ; MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US</creatorcontrib><description>The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.</description><edition>6</edition><language>ger</language><subject>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT ; MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK ; PHYSICS ; TESTING</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19961128&amp;DB=EPODOC&amp;CC=DE&amp;NR=69303893T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19961128&amp;DB=EPODOC&amp;CC=DE&amp;NR=69303893T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US</creatorcontrib><creatorcontrib>MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US</creatorcontrib><title>BETATIGUNGSEINHEITEN UND MIKROSENSOREN IN SOI-TECHNIK</title><description>The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.</description><subject>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT</subject><subject>MEASURING</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB1cg1xDPF0D_VzD3b19PNw9Qxx9VMI9XNR8PX0DvIPdvUL9g8Cinj6KQT7e-qGuDp7-Hl68zCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeBdXM0tjA2MLS-OQECNjohQBAHE7KNM</recordid><startdate>19961128</startdate><enddate>19961128</enddate><creator>ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US</creator><creator>MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US</creator><scope>EVB</scope></search><sort><creationdate>19961128</creationdate><title>BETATIGUNGSEINHEITEN UND MIKROSENSOREN IN SOI-TECHNIK</title><author>ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US ; MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE69303893TT23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>1996</creationdate><topic>INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT</topic><topic>MEASURING</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US</creatorcontrib><creatorcontrib>MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US</au><au>MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BETATIGUNGSEINHEITEN UND MIKROSENSOREN IN SOI-TECHNIK</title><date>1996-11-28</date><risdate>1996</risdate><abstract>The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language ger
recordid cdi_epo_espacenet_DE69303893TT2
source esp@cenet
subjects INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK
PHYSICS
TESTING
title BETATIGUNGSEINHEITEN UND MIKROSENSOREN IN SOI-TECHNIK
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T00%3A29%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZAVRACKY,%20PAUL,%20M.,%20NORWOOD,%20MA%2002062,%20US&rft.date=1996-11-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE69303893TT2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true