BETATIGUNGSEINHEITEN UND MIKROSENSOREN IN SOI-TECHNIK

The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride hav...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ZAVRACKY, PAUL, M., NORWOOD, MA 02062, US, MORRISON, RICHARD, H., JR., TAUNTON, MA 02780, US
Format:	Patent
Sprache:	ger
Schlagworte:	INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK PHYSICS TESTING
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Beschreibung
Zusammenfassung:	The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.