Hochgeschwindigkeitsdiode und Verfahren zur Herstellung
In a semiconductor device a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current d...
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| creator | YASUDA, YASUMITI, HITACHI-SHI, JP SAKURAI, NAOKI, HITACHI-SHI, JP OWADA, HIROSHI, HITACHI-SHI, JP MORI, MUTSUHIRO, HITACHI-SHI, JP ARAKAWA, HIDETOSHI, KITAIBARAKI-SHI, JP |
| description | In a semiconductor device a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density JF is passed into the second diodes, the relation is established in a forward voltage VF range of 0.1 (V) to 0.3 (V). The first diode is constituted by first and second semiconductor regions (13, 15) forming a pn junction therebetween, the second being in ohmic contact with one main electrode (3), and having an impurity concentration higher than that of the first semiconductor region (13). The second diode is constituted by first and third semiconductor regions (13, 16) forming a pn junction therebetween, the third being in contact through a Schottky barrier with the one main electrode (3) and having an impurity concentration higher than the first semiconductor region (13). |
| format | Patent |
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When a forward current with a current density JF is passed into the second diodes, the relation is established in a forward voltage VF range of 0.1 (V) to 0.3 (V). The first diode is constituted by first and second semiconductor regions (13, 15) forming a pn junction therebetween, the second being in ohmic contact with one main electrode (3), and having an impurity concentration higher than that of the first semiconductor region (13). The second diode is constituted by first and third semiconductor regions (13, 16) forming a pn junction therebetween, the third being in contact through a Schottky barrier with the one main electrode (3) and having an impurity concentration higher than the first semiconductor region (13).</description><edition>6</edition><language>ger</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION ; PULSE TECHNIQUE ; SEMICONDUCTOR DEVICES</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961219&DB=EPODOC&CC=DE&NR=69120995T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961219&DB=EPODOC&CC=DE&NR=69120995T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YASUDA, YASUMITI, HITACHI-SHI, JP</creatorcontrib><creatorcontrib>SAKURAI, NAOKI, HITACHI-SHI, JP</creatorcontrib><creatorcontrib>OWADA, HIROSHI, HITACHI-SHI, JP</creatorcontrib><creatorcontrib>MORI, MUTSUHIRO, HITACHI-SHI, JP</creatorcontrib><creatorcontrib>ARAKAWA, HIDETOSHI, KITAIBARAKI-SHI, JP</creatorcontrib><title>Hochgeschwindigkeitsdiode und Verfahren zur Herstellung</title><description>In a semiconductor device a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. 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When a forward current with a current density JF is passed into the second diodes, the relation is established in a forward voltage VF range of 0.1 (V) to 0.3 (V). The first diode is constituted by first and second semiconductor regions (13, 15) forming a pn junction therebetween, the second being in ohmic contact with one main electrode (3), and having an impurity concentration higher than that of the first semiconductor region (13). The second diode is constituted by first and third semiconductor regions (13, 16) forming a pn junction therebetween, the third being in contact through a Schottky barrier with the one main electrode (3) and having an impurity concentration higher than the first semiconductor region (13).</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION PULSE TECHNIQUE SEMICONDUCTOR DEVICES |
| title | Hochgeschwindigkeitsdiode und Verfahren zur Herstellung |
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