Anisotropische Ablagerung von Siliziumdioxyd

In a radio-frequency plasma deposition reactor (10), SiO2 is deposited from a source (16) of tetraethoxysilane (TEOS). The deposition is made to be anisotropic, that is, to be deposited preferentially on horizontal surfaces, by use in the deposition atmosphere of a constituency such as NH3 or NF3 wh...

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Bibliographische Detailangaben
Hauptverfasser:	LORY, EARL R., PENNINGTON, NEW JERSEY 08534, US, OLMER, LEONARD J., AUSTIN, TEXAS 78731, US
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	In a radio-frequency plasma deposition reactor (10), SiO2 is deposited from a source (16) of tetraethoxysilane (TEOS). The deposition is made to be anisotropic, that is, to be deposited preferentially on horizontal surfaces, by use in the deposition atmosphere of a constituency such as NH3 or NF3 which inhibits SiO2 deposition, along with a radio-frequency power in excess of 100 watts, which preferentially removes the inhibiting gas from horizontal surfaces through ion impact.