Vorrichtung zur Herstellung von Einkristallen nach dem Czochralski-Verfahren
An apparatus for producing a single crystal grown by Czochralski method includes a winding drum (64) disposed in a case (24) for winding up and down a flexible pull wire (20), a power transmission mechanism (M2, 46 - 56) for driving the winding drum (64), and a bearing unit (60) for rotatably suppor...
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| creator | YAMADA, FUMIO, USUI-GUN GUNMA-KEN, JP OHARA, TOORU, GUNMA-KEN, JP MASHIMO, MASAHIRO, GUNMA-KEN, JP NAKAMURA, YASUSHI, TOMIOKA-SHI, GUNMA-KEN, JP SHIOZAWA, ATSUSHI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP OHTSUKA, SEIICHIRO, TOMIOKA-SHI, GUNMA-KEN, JP NAMIKI, EIZI, GUNMA-KEN, JP ODA, MICHIAKI, ANNAKA-SHI, GUNMA-KEN, JP MIZUISHI, KOJI, ANNAKA-SHI, GUNMA-KEN, JP |
| description | An apparatus for producing a single crystal grown by Czochralski method includes a winding drum (64) disposed in a case (24) for winding up and down a flexible pull wire (20), a power transmission mechanism (M2, 46 - 56) for driving the winding drum (64), and a bearing unit (60) for rotatably supporting the winding drum (64). The power transmission mechanism (M2, 46 - 56) and the bearing unit (60) are disposed outside the case (24) and isolated from the furnace atmosphere surrounding the winding drum (64) and the pull wire (20) in the case (24). With this construction, metallic dust produced by abrasion from the power transmission mechanism (M2, 46 - 56) and the bearing unit (60) has no influence on the condition of the furnace atmosphere and hence the quality of a single crystal being pulled upwardly by the pull wire (20). |
| format | Patent |
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The power transmission mechanism (M2, 46 - 56) and the bearing unit (60) are disposed outside the case (24) and isolated from the furnace atmosphere surrounding the winding drum (64) and the pull wire (20) in the case (24). With this construction, metallic dust produced by abrasion from the power transmission mechanism (M2, 46 - 56) and the bearing unit (60) has no influence on the condition of the furnace atmosphere and hence the quality of a single crystal being pulled upwardly by the pull wire (20).</description><edition>6</edition><language>ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950706&DB=EPODOC&CC=DE&NR=69017642T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950706&DB=EPODOC&CC=DE&NR=69017642T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMADA, FUMIO, USUI-GUN GUNMA-KEN, JP</creatorcontrib><creatorcontrib>OHARA, TOORU, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>MASHIMO, MASAHIRO, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>NAKAMURA, YASUSHI, TOMIOKA-SHI, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>SHIOZAWA, ATSUSHI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP</creatorcontrib><creatorcontrib>OHTSUKA, SEIICHIRO, TOMIOKA-SHI, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>NAMIKI, EIZI, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>ODA, MICHIAKI, ANNAKA-SHI, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>MIZUISHI, KOJI, ANNAKA-SHI, GUNMA-KEN, JP</creatorcontrib><title>Vorrichtung zur Herstellung von Einkristallen nach dem Czochralski-Verfahren</title><description>An apparatus for producing a single crystal grown by Czochralski method includes a winding drum (64) disposed in a case (24) for winding up and down a flexible pull wire (20), a power transmission mechanism (M2, 46 - 56) for driving the winding drum (64), and a bearing unit (60) for rotatably supporting the winding drum (64). The power transmission mechanism (M2, 46 - 56) and the bearing unit (60) are disposed outside the case (24) and isolated from the furnace atmosphere surrounding the winding drum (64) and the pull wire (20) in the case (24). With this construction, metallic dust produced by abrasion from the power transmission mechanism (M2, 46 - 56) and the bearing unit (60) has no influence on the condition of the furnace atmosphere and hence the quality of a single crystal being pulled upwardly by the pull wire (20).</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAJyy8qykzOKCnNS1eoKi1S8EgtKi5JzckB8cvy8xRcM_OyizKLSxJzclLzFPISkzMUUlJzFZyr8pMzihJzirMzdcNSi9ISM4pS83gYWNOAQqm8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3sXVzNLA0NzMxCgkxMiYKEUAX6M3KQ</recordid><startdate>19950706</startdate><enddate>19950706</enddate><creator>YAMADA, FUMIO, USUI-GUN GUNMA-KEN, JP</creator><creator>OHARA, TOORU, GUNMA-KEN, JP</creator><creator>MASHIMO, MASAHIRO, GUNMA-KEN, JP</creator><creator>NAKAMURA, YASUSHI, TOMIOKA-SHI, GUNMA-KEN, JP</creator><creator>SHIOZAWA, ATSUSHI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP</creator><creator>OHTSUKA, SEIICHIRO, TOMIOKA-SHI, GUNMA-KEN, JP</creator><creator>NAMIKI, EIZI, GUNMA-KEN, JP</creator><creator>ODA, MICHIAKI, ANNAKA-SHI, GUNMA-KEN, JP</creator><creator>MIZUISHI, KOJI, ANNAKA-SHI, GUNMA-KEN, JP</creator><scope>EVB</scope></search><sort><creationdate>19950706</creationdate><title>Vorrichtung zur Herstellung von Einkristallen nach dem Czochralski-Verfahren</title><author>YAMADA, FUMIO, USUI-GUN GUNMA-KEN, JP ; OHARA, TOORU, GUNMA-KEN, JP ; MASHIMO, MASAHIRO, GUNMA-KEN, JP ; NAKAMURA, YASUSHI, TOMIOKA-SHI, GUNMA-KEN, JP ; SHIOZAWA, ATSUSHI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP ; OHTSUKA, SEIICHIRO, TOMIOKA-SHI, GUNMA-KEN, JP ; NAMIKI, EIZI, GUNMA-KEN, JP ; ODA, MICHIAKI, ANNAKA-SHI, GUNMA-KEN, JP ; MIZUISHI, KOJI, ANNAKA-SHI, GUNMA-KEN, JP</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE69017642TT23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>1995</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMADA, FUMIO, USUI-GUN GUNMA-KEN, JP</creatorcontrib><creatorcontrib>OHARA, TOORU, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>MASHIMO, MASAHIRO, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>NAKAMURA, YASUSHI, TOMIOKA-SHI, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>SHIOZAWA, ATSUSHI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP</creatorcontrib><creatorcontrib>OHTSUKA, SEIICHIRO, TOMIOKA-SHI, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>NAMIKI, EIZI, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>ODA, MICHIAKI, ANNAKA-SHI, GUNMA-KEN, JP</creatorcontrib><creatorcontrib>MIZUISHI, KOJI, ANNAKA-SHI, GUNMA-KEN, JP</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMADA, FUMIO, USUI-GUN GUNMA-KEN, JP</au><au>OHARA, TOORU, GUNMA-KEN, JP</au><au>MASHIMO, MASAHIRO, GUNMA-KEN, JP</au><au>NAKAMURA, YASUSHI, TOMIOKA-SHI, GUNMA-KEN, JP</au><au>SHIOZAWA, ATSUSHI, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP</au><au>OHTSUKA, SEIICHIRO, TOMIOKA-SHI, GUNMA-KEN, JP</au><au>NAMIKI, EIZI, GUNMA-KEN, JP</au><au>ODA, MICHIAKI, ANNAKA-SHI, GUNMA-KEN, JP</au><au>MIZUISHI, KOJI, ANNAKA-SHI, GUNMA-KEN, JP</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Vorrichtung zur Herstellung von Einkristallen nach dem Czochralski-Verfahren</title><date>1995-07-06</date><risdate>1995</risdate><abstract>An apparatus for producing a single crystal grown by Czochralski method includes a winding drum (64) disposed in a case (24) for winding up and down a flexible pull wire (20), a power transmission mechanism (M2, 46 - 56) for driving the winding drum (64), and a bearing unit (60) for rotatably supporting the winding drum (64). The power transmission mechanism (M2, 46 - 56) and the bearing unit (60) are disposed outside the case (24) and isolated from the furnace atmosphere surrounding the winding drum (64) and the pull wire (20) in the case (24). With this construction, metallic dust produced by abrasion from the power transmission mechanism (M2, 46 - 56) and the bearing unit (60) has no influence on the condition of the furnace atmosphere and hence the quality of a single crystal being pulled upwardly by the pull wire (20).</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Vorrichtung zur Herstellung von Einkristallen nach dem Czochralski-Verfahren |
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