Elektrodenstruktur für III-V-Verbindungshalbleiterbauelement und deren Herstellungsverfahren

The present invention relates to an electrode structure formed on a III-V compound semiconductor element (1) and a method for manufacturing the same and an object thereof is to provide an electrode which exhibits a high wire bonding strength, a low ohmic contact resistance, and high reliability, and is easy to shape itself. The electrode structure of the present invention is formed by annealing after the formation of a laminated structure having an ohmic layer (2) including at least Ni formed on the III-V compound semiconductor element (1), a bonding layer (5) to be connected with a bonding wire, a stopper layer (4) provided between the ohmic layer (2) and the bonding layer (5) and an isolation layer (3) provided between the stopper layer (4) and the ohmic layer (2).