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In a display electrode substrate comprising at least two TFTs (20a,20b) connected in series to each picture element (22), the first and second thin film transistors are juxtaposed on the same one of the gate bus lines (26), part of the gate bus line (26) functions as gate electrodes of the first and...

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Bibliographische Detailangaben
Hauptverfasser:	KATAYAMA, MIKIO, IKOMA-SHI, NARA-KEN, JP, TANAKA, HIROHISA, IKOMA-GUN, NARA-KEN, JP, NEGOTO, HIDENORI, IKOMA-SHI, NARA-KEN, JP, MORIMOTO, HIROSHI, KITAKATSURAGI-GUN, NARA-KEN, JP, KANEMORI, YUZURU, TENRI-SHI, NARA-KEN, JP
Format:	Patent
Sprache:	ger
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	In a display electrode substrate comprising at least two TFTs (20a,20b) connected in series to each picture element (22), the first and second thin film transistors are juxtaposed on the same one of the gate bus lines (26), part of the gate bus line (26) functions as gate electrodes of the first and second thin film transistors (20a,20b), a source electrode (30a) of the first thin film transistor (20a) is connected to the source bus line (35), a drain electrode (31a) of the first thin film transistor (20a) is connected to a source electrode (30b) of the second thin film transistor (20b), and a drain electrode (31b) of the second thin film transistor (20b) is connected to the picture element electrode, whereby a picture element defect caused by a short-circuit defect of the TFTs can be reduced.