Transistorisierte Hyperfrequenz-Abtast- und Halteschaltung

Transistorisierte Hyperfrequenz-Abtast- und Halteschaltung

Hyperfrequency (1 GHz) sample-and-hold circuit comprising a field-effect transistor, to which an input signal is applied, and a storage capacitance. The transistor (6) is made of materials from group III-V, such as GaAs or InP, and its channel region is controlled by an optical control consisting of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: RUGGERI, STEPHANE, THOMSON CSF, F-92045 PARIS LA DEFENSE, FR, LE PAIH, MICHELE, THOMSON CSF, F-92045 PARIS LA DEFENSE, FR, GUIBERTEAU, CHRISTIAN, THOMSON CSF, F-92045 PARIS LA DEFENSE, FR
Format: Patent
Sprache:ger
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Hyperfrequency (1 GHz) sample-and-hold circuit comprising a field-effect transistor, to which an input signal is applied, and a storage capacitance. The transistor (6) is made of materials from group III-V, such as GaAs or InP, and its channel region is controlled by an optical control consisting of an optical fibre (8) and a pulsed semiconductor laser (9). With a view to reducing the switch-over time of the transistor (6), the latter and the laser (9) are both biased to points close to their thresholds. Application in signal processing, at frequencies of the order of 1 GHz.