Belichtungseinrichtung

An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	OZAWA, KUNITAKA, ISEHARA-SHI, KANAGAWA-KEN, JP, MIZUSAWA, NOBUTOSHI, YAMATO-SHI KANAGAWA-KEN, JP, UZAWA, SHUNICHI, TOKYO, JP, EBINUMA, RYUICHI, KAWASAKI-SHI, KANAGAWA-KEN, JP, KAWAKAMI, EIGO, EBINA-SHI KANAGAWA-KEN, JP, TERASHIMA, SHIGERU, ATSUGI-SHI KANAGAWA-KEN, JP, SHIMODA, ISAMU, ZAMA-SHI KANAGAWA-KEN, JP, MORI, MAKIKO, ATSUGI-KU, KANAGAWA-KEN, JP, AMEMIYA, MITSUAKI, ATSUGI-SHI KANAGAWA-KEN, JP, HARA, SHINICHI, ATSUGI-SHI KANAGAWA-KEN, JP, KUROSAWA, HIROSHI, ATSUGI-SHI KANAGAWA-KEN, JP, UDA, KOJI, YOKOHAMA-SHI KANAGAWA-KEN, JP
Format:	Patent
Sprache:	ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.