Sputtertarget und Verfahren zu seiner Herstellung

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Bibliographische Detailangaben
Hauptverfasser:	KAWAGUCHI, TATSUZO, YOKOHAMA-SHI KANAGAWA-KEN, JP, YAMANOBE, TAKASHI, YOKOHAMA-SHI KANAGAWA-KEN, JP, MIZUTANI, TOSHIAKI, YOKOHAMA-SHI KANAGAWA-KEN, JP, SATOU, MICHIO, KANAGAWA-KU YOKOHAMA-SHI KANAGAWA-KEN, JP, MITSUHASHI, KAZIHIKO, CHIGASAKI-SHI KANAGAWA-KEN, JP, KAWAI, MITSUO, SEYA-KU, YOKOHAMA-SHI, JP
Format:	Patent
Sprache:	ger
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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