Methode zum Stoppen von Ionen und Verunreinigungen in Plasma-Strahlungquellen im extremem-ultaviolett oder weichen Röntgenbereich durch Verwendung von Krypton

A method and device for filtering ions and small debris by using krypton or its mixtures to fill the chamber of the EUV-radiation source. The method can be combined with mechanical methods of filtering debris particles with large size (greater than one micron) and allows to obtain plasma EUV-radiati...

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Bibliographische Detailangaben
Hauptverfasser:	ZHENG, CHENGEN, MEZI, LUCA, FLORA, FRANCESCO
Format:	Patent
Sprache:	ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS X-RAY TECHNIQUE
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Beschreibung
Zusammenfassung:	A method and device for filtering ions and small debris by using krypton or its mixtures to fill the chamber of the EUV-radiation source. The method can be combined with mechanical methods of filtering debris particles with large size (greater than one micron) and allows to obtain plasma EUV-radiation without polluting debris and to extend the useful life of the mirrors of a microlithography apparatus.