MAGNETISCHES MESSSYSTEM MIT IRREVERSIBLER CHARAKTERISTIK, SOWIE METHODE ZUR ERZEUGUNG, REPARATUR UND VERWENDUNG EINES SOLCHEN SYSTEMS

MAGNETISCHES MESSSYSTEM MIT IRREVERSIBLER CHARAKTERISTIK, SOWIE METHODE ZUR ERZEUGUNG, REPARATUR UND VERWENDUNG EINES SOLCHEN SYSTEMS

A novel magnetic data storage system and a sensing system of magnetic characteristics are disclosed ; the systems have a magnetization direction that is irreversible in an external magnetic field. A method of manufacturing, a method of resetting or changing or repairing and a method of operating suc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LENSSEN, KARS-MICHIEL H, SOMERS, GERARDUS H, VAN ZON, JOANNES B, KUIPER, ANTONIUS E, ADELERHOF, DERK J
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MAGNETS
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
STATIC STORES
TESTING
TRANSFORMERS
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Beschreibung
Zusammenfassung:A novel magnetic data storage system and a sensing system of magnetic characteristics are disclosed ; the systems have a magnetization direction that is irreversible in an external magnetic field. A method of manufacturing, a method of resetting or changing or repairing and a method of operating such systems are also disclosed. The systems can include a set of magnetic devices in a balancing configuration ; essentially each of said devices comprises a structure of layers including at least a first ferromagnetic layer and a second ferromagnetic layer with at least a separation layer of a non-magnetic material therebetween, said structure having at least a magneto resistance effect. The magnetization direction of the first ferromagnetic layer of at least one of said devices is irreversible in an external magnetic field higher than about 35 kA/m .