DEHNUNGSSTREIFEN MIT EINER DÜNNEN SCHICHT AUS HOCH-LEITFÄHIGEM SILIZIUM

DEHNUNGSSTREIFEN MIT EINER DÜNNEN SCHICHT AUS HOCH-LEITFÄHIGEM SILIZIUM

A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: GROSS, CHRIS
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator GROSS, CHRIS
description A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE60037130TT2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE60037130TT2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE60037130TT23</originalsourceid><addsrcrecordid>eNrjZPB0cfXwC_VzDw4OCXL1dHP1U_D1DFFw9fRzDVJwOTzHzw8oEuzs4ensEaLgGBqs4OHv7KHr4-oZ4na4xcPT3dVXIdjTxzPKM9SXh4E1LTGnOJUXSnMzKLm5hgBVpxbkx6cWFyQmp-allsS7uJoZGBibGxobhIQYGROlCABhpC-A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DEHNUNGSSTREIFEN MIT EINER DÜNNEN SCHICHT AUS HOCH-LEITFÄHIGEM SILIZIUM</title><source>esp@cenet</source><creator>GROSS, CHRIS</creator><creatorcontrib>GROSS, CHRIS</creatorcontrib><description>A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.</description><language>ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080911&amp;DB=EPODOC&amp;CC=DE&amp;NR=60037130T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080911&amp;DB=EPODOC&amp;CC=DE&amp;NR=60037130T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GROSS, CHRIS</creatorcontrib><title>DEHNUNGSSTREIFEN MIT EINER DÜNNEN SCHICHT AUS HOCH-LEITFÄHIGEM SILIZIUM</title><description>A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB0cfXwC_VzDw4OCXL1dHP1U_D1DFFw9fRzDVJwOTzHzw8oEuzs4ensEaLgGBqs4OHv7KHr4-oZ4na4xcPT3dVXIdjTxzPKM9SXh4E1LTGnOJUXSnMzKLm5hgBVpxbkx6cWFyQmp-allsS7uJoZGBibGxobhIQYGROlCABhpC-A</recordid><startdate>20080911</startdate><enddate>20080911</enddate><creator>GROSS, CHRIS</creator><scope>EVB</scope></search><sort><creationdate>20080911</creationdate><title>DEHNUNGSSTREIFEN MIT EINER DÜNNEN SCHICHT AUS HOCH-LEITFÄHIGEM SILIZIUM</title><author>GROSS, CHRIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE60037130TT23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>GROSS, CHRIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GROSS, CHRIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEHNUNGSSTREIFEN MIT EINER DÜNNEN SCHICHT AUS HOCH-LEITFÄHIGEM SILIZIUM</title><date>2008-09-11</date><risdate>2008</risdate><abstract>A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language ger
recordid cdi_epo_espacenet_DE60037130TT2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title DEHNUNGSSTREIFEN MIT EINER DÜNNEN SCHICHT AUS HOCH-LEITFÄHIGEM SILIZIUM
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T16%3A49%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GROSS,%20CHRIS&rft.date=2008-09-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE60037130TT2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true