DEHNUNGSSTREIFEN MIT EINER DÜNNEN SCHICHT AUS HOCH-LEITFÄHIGEM SILIZIUM

A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in t...

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Bibliographische Detailangaben
1. Verfasser:	GROSS, CHRIS
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.