STRAHLUNGSEMPFINDLICHE COPOLYMERE, FOTORESISTZUSAMMENSETZUNGEN UND ZWEISCHICHTRESISTSYSTEME FÜR DEN TIEFEN UV-BEREICH

Radiation sensitive resins for use in a top layer resists in bilayer systems for use in deep UV photolithography comprises copolymers having the following structural units: and optionally, wherein n is an integer of 1 to 5, R1 is methyl or trimethylsiloxy, R2 is a tert-butyl group, R3, R4 and R5 are...

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Bibliographische Detailangaben
Hauptverfasser:	FOSTER, PATRICK, SPAZIANO, GREGORY DOMENIC, BIAFORE, JOHN JOSEPH
Format:	Patent
Sprache:	ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	Radiation sensitive resins for use in a top layer resists in bilayer systems for use in deep UV photolithography comprises copolymers having the following structural units: and optionally, wherein n is an integer of 1 to 5, R1 is methyl or trimethylsiloxy, R2 is a tert-butyl group, R3, R4 and R5 are each independently hydrogen or a methyl group.